Everything about Dry Etching totally explained
Dry etching refers to the removal of material, typically a masked pattern of
semiconductor material, by exposing the material to a bombardment of
ions (usually a
plasma of
nitrogen,
chlorine and
boron trichloride) that dislodge portions of the material from the exposed surface. Unlike with many (but not all, see
isotropic etching) of the wet chemical etchants used in
wet etching, the dry etching process typically etches directionally or anisotropically.
Explanation
Dry etching is used in conjunction with
photolithographic techniques to attack certain areas of a semiconductor surface in order to form recesses in material, such as
contact holes (which are contacts to the underlying
semiconductor substrate) or
via holes (which are holes that are formed to provide an interconnect path between conductive layers in the layered
semiconductor device) or to otherwise remove portions of semiconductor layers where predominantly vertical sides are desired. In conjunction with
semiconductor manufacturing,
micromachining and display production the removal of organic residues by oxygen plasmas is sometimes correctly described as a dry etch process. However, also the term
plasma ashing may be used.
Further Information
Get more info on 'Dry Etching'.
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